Development of the technology of obtaining thin gallium oxide films

Author: otar dolidze
Keywords: Gallium oxide, magnetron sputtering, field effect transistor.
Annotation:

Increasing the performance of the components included in the functional communications systems requires, accordingly, the improvement of the quality of the materials included in it or the creation of new materials with better parameters. In this regard, the fundamental and applied scientific side is waiting for the entry of gallium oxide (Ga2O3) into nanotechnology as a promising new generation semiconductor material. The technological process of magnetron emission of Gallium oxide low-temperature formation is discussed, the electro-physical and dielectric parameters of its oxide film are investigated. The goal is set and the content discussion of separate technological processes is done. A technological route is designed to use oxide as an under gate dielectric in field-effect transistor. Optimal parameters for making the tape are developed. It has been shown that oxide films obtained by this technology can be used in the production of micro and nanotechnologies.